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Journal Article Downscaling of Organic Field-Effect Transistors with a Polyelectrolyte Gate Insulator
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Authors
Lars Herlogsson, Yong-Young Noh, Ni Zhao, Xavier Crispin, Henning Sirringhaus, Magnus Berggren
Issue Date
200812
Source
Advanced Materials, v.20 no.24, pp.4708-4713
ISSN
0935-9648
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA
DOI
https://dx.doi.org/10.1002/adma.200801756
Project Code
08MC4100, Development of Next Generation RFID Technology for Item Level Applications, Chae Jong- Suk
Abstract
The poly-anionic electrolyte poly(vinyl phosphonic acid-co-acrylic acid) (P(VPA-AA)) was used as gate insulator to suppress short-channel effects in sub-micrometer channel organic field effect transistors (OFET) based on regioregular poly(3-hexylthiophene) (P3HT). The initial linear dependence of the drain current on the drain voltage in the output characteristics suggest low source and drain contact resistance. It is found that the on/off current ratio in approximately 25 and the extracted threshold voltage is 0 V. The switching speed of the transistor is expected to increase when the channel length is shortened. The responses for channel lengths exceeding 3μm are obtained from OFETs with source and drain electrodes patterned by photolithography on a silicon substrate. It is seen that at the transition point, the holes across the channel as fast as the ions in the electrolyte get polarized.
KSP Keywords
3-hexylthiophene(SEM poly), Channel Length, Contact resistance(73.40.Cg), Drain current, Drain voltage, Field effect transistors(Substrate temperature), Field-effect transistors(FETs), Gate insulator, Linear dependence, ON/OFF current ratio, Organic field-effect