BROWSE
Detail
Journal Article
Effects of Post-growth Annealing on the Structure and Electro-optical Properties of Low-temperature Grown GaAs
Cited 13 time in 
Share 
Share
- Authors
- Doo-Hyeb Youn, Seung-Hwan Lee, Han-Cheol Ryu, Se-Young Jung, Seung-Bum Kang, Min-Hwan Kwack, Sung Il Kim, Sang-Kuk Choi, Mun-Cheol Baek, Kwang-Yong Kang, Chang-Seop Kim, Ki-Ju Yee, Young-Bin Ji, Eui-Su Lee, Tae-In Jeon, Seong-Jin Kim, Sanjeev Kumar, Gil-Ho Kim
- Issue Date
- 2008-06
- Citation
- Journal of Applied Physics, v.103, no.12, pp.1-5
- ISSN
- 0021-8979
- Publisher
- American Institute of Physics(AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- This paper investigates how postgrowth annealing affects the structure and the electro-optical properties of low-temperature grown GaAs (LT-GaAs). A systematic study of as-grown and annealed LT-GaAs revealed that the carrier lifetime is directly related to the density of the An duster and distance between As clusters. The Ga/As compositional ratio and the crystal structure of As clusters were observed for the first time. The As/Ga ratio of the As clusters is higher than that obtained from the LT-GaAs. The carrier lifetime of the annealed LT-GaAs increases as the annealing temperature increases from 400 (less than 30 fs) to 800 °C (824 fs). Under the annealing temperatures ranging from 600 to 700 °C for 90 s, we observed the emission of terahertz radiation using the annealed LT-GaAs grown at temperatures ranging from 260 to 320 °C. © 2008 American Institute of Physics.
- KSP Keywords
- Annealing temperature, As clusters, As-grown, LT-GaAs, Low temperature(LT), Low-temperature-grown GaAs, Post-growth annealing, Systematic Study, carrier lifetime, crystal structure, electro-optical properties(E-O)