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학술지 Effects of Post-growth Annealing on the Structure and Electro-optical Properties of Low-temperature Grown GaAs
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저자
윤두협, 이승환, 류한철, 정세영, 강승범, 곽민환, 김성일, 최상국, 백문철, 강광용, 김창섭, 이기주, 지영빈, 이의수, 전태인, 김성진, Sanjeev Kumar, 김길호
발행일
200806
출처
Journal of Applied Physics, v.103 no.12, pp.1-5
ISSN
0021-8979
출판사
American Institute of Physics(AIP)
DOI
https://dx.doi.org/10.1063/1.2946452
초록
This paper investigates how postgrowth annealing affects the structure and the electro-optical properties of low-temperature grown GaAs (LT-GaAs). A systematic study of as-grown and annealed LT-GaAs revealed that the carrier lifetime is directly related to the density of the An duster and distance between As clusters. The Ga/As compositional ratio and the crystal structure of As clusters were observed for the first time. The As/Ga ratio of the As clusters is higher than that obtained from the LT-GaAs. The carrier lifetime of the annealed LT-GaAs increases as the annealing temperature increases from 400 (less than 30 fs) to 800 °C (824 fs). Under the annealing temperatures ranging from 600 to 700 °C for 90 s, we observed the emission of terahertz radiation using the annealed LT-GaAs grown at temperatures ranging from 260 to 320 °C. © 2008 American Institute of Physics.
KSP 제안 키워드
Annealing temperature, As clusters, As-grown, LT-GaAs, Low temperature(LT), Post-growth annealing, Systematic Study, carrier lifetime, crystal structure, electro-optical properties(E-O), low-temperature grown GaAs