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Journal Article
Quantum-dot light-emitting diodes utilizing CdSe∕ZnS nanocrystals embedded in TiO2 thin film
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- Authors
- Seung-Hee Kang, Ch. Kiran Kumar, Zong Hoon Lee, Kyung-Hyun Kim, Chul Huh, Eui-Tae Kim
- Issue Date
- 2008-11
- Citation
- Applied Physics Letters, v.93, no.19, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSeZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO 2/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDsSi system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry. © 2008 American Institute of Physics.
- KSP Keywords
- Colloidal solutions, Current-voltage, Diode current, LED devices, Light-emitting diodes (leds), Metallorganic Chemical Vapor Deposition, N-TiO 2, P-Si, PN diode, Petri net(PN), Plasma-enhanced