상세정보
학술지
Quantum-dot Light-emitting Diodes Utilizing CdSe/ZnS Nanocrystals Embedded in TiO2TiO2 Thin Film
- 발행일
- 200811
- 출처
- Applied Physics Letters, v.93 no.19, pp.1-3
- ISSN
- 0003-6951
- 출판사
- American Institute of Physics (AIP)
- 협약과제
- 08ZB1400, 유비쿼터스 라이프케어 원천요소기술 개발, 박선희
- 초록
- Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSeZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO 2/QDs/p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDsSi system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry. © 2008 American Institute of Physics.
- KSP 제안 키워드
- Colloidal solutions, Current-voltage, Diode current, LED devices, Light-emitting diodes (leds), Metallorganic Chemical Vapor Deposition, N-TiO 2, P-Si, PN diode, Petri net(PN), Plasma-enhanced