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Journal Article
Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography
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- Authors
- Y.-H. Ham, Y. Kim, K.-H. Baek, L. M. Do, K.-H. Kwon, K.-B. Park
- Issue Date
- 2011-07
- Citation
- Journal of Nanoscience and Nanotechnology, v.11, no.7, pp.6523-6527
- ISSN
- 1533-4880
- Publisher
- American Scientific Publishers (ASP)
- Language
- English
- Type
- Journal Article
- Abstract
- In the nanoimprint lithography (NIL) process, profile control of imprint masters is a very important task. Therefore, we attempted to control the etched slope of imprint masters as a function of adding O 2 to CF 4 plasma. Etched profile mechanisms and relationships between the etch kinetics and plasma chemistry were explored using zero-dimensional-based modeling. O 2 flow rate increased to 24 sccm, the Si etch rate increased l in the range I of 186-393 nm/min, while the etch rate rapidly decreased as the O 2 flow rate increases beyond 24 sccm. Meanwhile, change in the etch rate of SiO 2 followed a similar tendency as the etch rate of Si as a function of O 2 flow rate in the CF 4/O 2mixing gases. The Si and SiO 2 etch rate were expected to be closely dependent on the F radical intensity in CF 4/O 2 mixing gases. Moreover, the results of simulated normalized lateral etch critical dimension (NLECD) are in agreement with the measured NLECD as a function of O 2 flow rate in the CF 4/O 2 mixing gases. Copyright © 2011 American Scientific Publishers All rights reserved.
- KSP Keywords
- CF 4, Critical dimension, Etch rates, Flow rate, Nanoimprint lithography(NIL), SiO 2, Slope control, Zero-dimensional, etching mechanism, nano-imprinting lithography, plasma chemistry