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Properties of Ferroelectric P(VDF-TrFE) 70/30 Copolymer Films as a Gate Dielectric
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- Authors
- Soon-Won Jung, Sung-Min Yoon, Seung Youl Kang, Byoung-Gon Yu
- Issue Date
- 2008-12
- Citation
- Integrated Ferroelectrics, v.100, no.1, pp.198-205
- ISSN
- 1058-4587
- Publisher
- Taylor & Francis
- Language
- English
- Type
- Journal Article
- Project Code
- 08IB2100, 강유전체 박막재료의 특성연구, Byoung Gon Yu
- Abstract
- We directly formed the organic ferroelectric P(VDF-TrFE) 70/30 copolymer film by the spin coating for making the MFS structure in the silicon wafer. To understand the crystallization behavior of P(VDF-TrFE) 70/30 copolymer, the morphologies of copolymer thin films were studied by AFM and XRD. AFM studies revealed that as grown and annealed films showed surface roughness greater than amorphous films due to crystallization. The XRD spectrum of the films subjected to various annealing temperatures showed 棺-phase and this phase content was maximum at 140°C annealing. The capacitance shows hysteresis behavior like a buttery shape due to the polarization reversal in the film and this result indicates clearly that the film has a ferroelectric property. The dielectric constants of the P(VF2-TrFE) copolymer films calculated from the capacitance at the two peak points of the C-V characteristics were about 8.7. Copyright © Taylor & Francis Group, LLC.
- KSP Keywords
- AFM studies, Amorphous films, Annealed films, Annealing temperature, C-V characteristics, Computer Vision(CV), Copolymer films, Copolymer thin films, Crystallization behavior, Dielectric Constant, Ferroelectric properties