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Journal Article
A 60 GHz MIXER USING 0.25 um SiGe BiCMOS TECHNOLOGY
- Authors
- Sang-Heung Lee, Ja-Yol Lee, Hae Cheon Kim
- Issue Date
- 2008-12
- Citation
- Microwave and Optical Technology Letters, v.50 no.12, pp.3007-3009
- ISSN
- 0895-2477
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Project Code
- 08ZB1300, SiGe-Based Quantum Channel Nano-Device Technology, Lee Sang-Heung
- Abstract
- In this article, a 60 GHz band down-conversion mixer for 60 GHz wireless personal-area network is designed and fabricated on a chip using 0.25 μm SiGe:C BiCMOS process technology. To design this 60 GHz band mixer, architecture of double-balanced mixer is used, including input and output balun circuits, which are composed of active elements. The results of the fabricated mixer measured between RF 57 and 63 GHz show conversion gain of 12.0-10.7 dB, LO to RF isolation and LO to IF isolation of more than 28 dB, and input P1dB of -1.7 to -18 dBm. The chip size of the manufactured mixer is 1.3 mm × 0.8 mm. © 2008 Wiley Periodicals, Inc.
- KSP Keywords
- 60 GHz band, Active Element, BiCMOS process, Conversion gain, Double-balanced mixer, Down-conversion mixer, RF isolation, SiGe BiCMOS technology, Wireless personal, area network, input and output