상세정보
학술지
Process Compatible Silicon-germanium-antimony Heating Layer for High Density Phase-change Memory Applications
- 발행일
- 200812
- 출처
- Microelectronic Engineering, v.85 no.12, pp.2342-2345
- ISSN
- 0167-9317
- 출판사
- Elsevier
- 초록
- The effects of SiGeSb heating layers, formed at room temperature by a sputtering method, on the performance of phase-change memory devices were investigated. The amount of Sb atoms in SiGeSb films was modified by changing sputtering power for a Sb target, and the resulting resistivities of the films ranged from 2.5 to 3.75 × 107 m廓 cm depending on Sb concentration. The reset current and the set pulse width of a phase-change memory device decreased with decreasing Sb concentration due to an increase of the electrical and thermal resistances. The SiGeSb heating layer, like a SiGe heating layer grown at 650 °C by a chemical vapor deposition (CVD) technique, resulted in lower programming current and higher speed than a conventional TiN heating layer. The sputtered SiGeSb film appears superior to the CVD SiGe film for integration with a CMOS process because of its low formation temperature. © 2008 Elsevier B.V. All rights reserved.
- KSP 제안 키워드
- CMOS Process, Chemical Vapor Deposition, Formation temperature, Heating layers, High-density, Memory applications, Phase Change Material(PCM), Room-temperature, SiGe film, Silicon-germanium(SiGe), Sputtering method