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Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications
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- Issue Date
- 2008-12
- Citation
- Microelectronic Engineering, v.85, no.12, pp.2342-2345
- ISSN
- 0167-9317
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- The effects of SiGeSb heating layers, formed at room temperature by a sputtering method, on the performance of phase-change memory devices were investigated. The amount of Sb atoms in SiGeSb films was modified by changing sputtering power for a Sb target, and the resulting resistivities of the films ranged from 2.5 to 3.75 × 107 m廓 cm depending on Sb concentration. The reset current and the set pulse width of a phase-change memory device decreased with decreasing Sb concentration due to an increase of the electrical and thermal resistances. The SiGeSb heating layer, like a SiGe heating layer grown at 650 °C by a chemical vapor deposition (CVD) technique, resulted in lower programming current and higher speed than a conventional TiN heating layer. The sputtered SiGeSb film appears superior to the CVD SiGe film for integration with a CMOS process because of its low formation temperature. © 2008 Elsevier B.V. All rights reserved.
- KSP Keywords
- CMOS Process, Chemical Vapor Deposition, Formation temperature, Heating layers, High-density, Memory applications, Phase Change Material(PCM), Room-temperature, SiGe film, Sputtering method, Sputtering power