상세정보
학술지
Combinatorial Approach to the Fabrication of Zinc-Tin-Oxide Transparent Thin-Film Transistors
- 발행일
- 200901
- 출처
- Journal of the Korean Physical Society, v.54 no.1, pp.544-548
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- Zn-Sn-O (ZTO) thin films were prepared for channels in top-gate transparent thin-film transistors (TTFTs). Thin ZTO films (~20 nm) with a wide range of compositions could be easily formed by using a combinatorial method with two RF magnetron sputter guns equipped with ZnO and SnO2 targets. Specially, ZTO-TTFTs could be fabricated by using low thermal processes at temperatures below 300 °C, where electrical properties were improved by controlling both the deposition rate and the temperature. In ZTO films with a compositional zone from [Zn : Sn - ~4 : 1] to [Zn : Sn = ~2 : 1] and amorphous-like structures, reliable transfer plots with high I on/Ioff ratios (>107) could be obtained.
- KSP 제안 키워드
- 20 nm, Amorphous-like, Combinatorial approach, Combinatorial method, RF magnetron sputter, Reliable transfer, Thermal process, Thin-Film Transistor(TFT), Wide range, Zinc tin oxide, Zn-Sn-O(ZTO)