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Combinatorial Approach to the Fabrication of Zinc-Tin-Oxide Transparent Thin-Film Transistors
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- Authors
- Woo-Seok Cheong, Sung-Min Yoon, Jae-Heon Shin, Chi-Sun Hwang
- Issue Date
- 2009-01
- Citation
- Journal of the Korean Physical Society, v.54, no.1, pp.544-548
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- Zn-Sn-O (ZTO) thin films were prepared for channels in top-gate transparent thin-film transistors (TTFTs). Thin ZTO films (~20 nm) with a wide range of compositions could be easily formed by using a combinatorial method with two RF magnetron sputter guns equipped with ZnO and SnO2 targets. Specially, ZTO-TTFTs could be fabricated by using low thermal processes at temperatures below 300 °C, where electrical properties were improved by controlling both the deposition rate and the temperature. In ZTO films with a compositional zone from [Zn : Sn - ~4 : 1] to [Zn : Sn = ~2 : 1] and amorphous-like structures, reliable transfer plots with high I on/Ioff ratios (>107) could be obtained.
- KSP Keywords
- 20 nm, Amorphous-like, Combinatorial approach, Combinatorial method, RF magnetron sputter, Reliable transfer, Thermal process, Thin-Film Transistor(TFT), Wide range, Zinc tin oxide, Zn-Sn-O(ZTO)