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Journal Article Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors
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Authors
Yong-Young Noh, Henning Sirringhaus
Issue Date
2009-02
Citation
Organic Electronics, v.10, no.1, pp.174-180
ISSN
1566-1199
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.orgel.2008.10.021
Abstract
We have demonstrated top-gate polymer field-effect transistors (FETs) with ultra-thin (30-50 nm), room-temperature crosslinkable polymer gate dielectrics based on blending an insulating base polymer such as poly(methyl methacrylate) with an organosilane crosslinking agent, 1,6-bis(trichlorosilyl)hexane. The top-gate polymer transistors with thin gate dielectrics were operated at gate voltages less than -8 V with a relatively high dielectric breakdown strength (>3 MV/cm) and a low leakage current (10-100 nA/mm2 at 2 MV/cm). The yield of thin gate dielectrics in top-gate polymer FETs is correlated with the roughness of underlying semiconducting polymer film. High mobilities of 0.1-0.2 cm2/V s and on and off state current ratios of 104 were achieved with the high performance semiconducting polymer, poly(2,5-bis(3-alkylthiophen-2yl)thieno[3,2-b]thiophene. © 2008 Elsevier B.V. All rights reserved.
KSP Keywords
Crosslinkable polymer, Dielectric breakdown strength, Field Effect Transistor(FET), High dielectric, High performance, Low leakage current, Polymer films, Room temperature, crosslinking agent, methyl methacrylate(Macroporous poly), off-state