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학술대회 Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
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조두희, 박상희, 양신혁, 변춘원, 정승묵, 정우석, 신재헌, 유민기, 황치선, 윤성민, 추혜용, 조경익
International Display Workshops (IDW) 2008, pp.1625-1628
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.1 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT.
KSP 제안 키워드
Active Layer, Al-Zn, Bottom gate structure, Oxide material, Post-annealing, Room-temperature, Thin-Film Transistor(TFT), Turn-on voltage, Zn-Sn-O(ZTO), bias stability, electrical performance