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학술대회
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
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- 발행일
- 200812
- 출처
- International Display Workshops (IDW) 2008, pp.1625-1628
- 초록
- We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.1 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT.
- KSP 제안 키워드
- Active Layer, Al-Zn, Bottom gate structure, Oxide material, Post-annealing, Room-temperature, Thin-Film Transistor(TFT), Turn-on voltage, Zn-Sn-O(ZTO), bias stability, electrical performance