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Conference Paper
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
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- Authors
- Doo-Hee Cho, Sang-Hee Ko Park, Shin Hyuk Yang, Chun Won Byun, Sung Mook Chung, Woo-Seok Cheong, Jae Heon Shin, Min Ki Ryu, Jeong Ik Lee, Chi-Sun Hwang, Sung Min Yoon, Hye-Yong Chu, Kyoung Ik Cho
- Issue Date
- 2008-12
- Citation
- International Display Workshops (IDW) 2008, pp.1625-1628
- Language
- English
- Type
- Conference Paper
- Abstract
- We have fabricated the transparent bottom gate and top gate TFTs using new oxide material of Al-Zn-Sn-O (AZTO) as an active layer. The AZTO active layer was deposited by RF magnetron sputtering at room temperature. Our novel TFT showed good TFT performance without post-annealing. The field effect mobility and the sub-threshold swing were improved by the post-annealing, and the mobility increased with SnO2 content. The AZTO TFT (about 4 mol% AlOx, 66 mol% ZnO, and 30 mol% SnO2) exhibited a mobility of 10.1 cm2/Vs, a turn-on voltage of 0.4 V, a sub-threshold swing of 0.6 V/dec, and an on/off ratio of 109. Though the bottom gate AZTO TFT showed good electrical performance, the bias stability was relatively poor. The bias stability was significantly improved in the top gate AZTO TFT.
- KSP Keywords
- Active Layer, Al-Zn, Bias stability, Bottom gate structure, Electrical performance, ON/OFF ratio, Oxide material, Post-annealing, Rf Magnetron sputtering, Room temperature, Thin-Film Transistor(TFT)