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Conference Paper
High Speed Flash Memory and 1T-DRAM on Dopant Segregated Schottky Barrier (DSSB) FinFET SONOS Device for Multi-functional SoC Applications
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- Authors
- Sung-Jin Choi, Jin-Woo Han, Sung Ho Kim, Dong-Hyun Kim, Moon-Gyu Jang, Jong-Heon Yang, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myeong Ho Song, Yun Chang Park, Jeoung Woo Kim, Yang-Kyu Choi
- Issue Date
- 2008-12
- Citation
- International Electron Devices Meeting (IEDM) 2008, pp.1-4
- Language
- English
- Type
- Conference Paper
- Abstract
- A novel dopant segregated Schottky barrier (DSSB) FinFET SONOS device is demonstrated in terms of multifunctioning in a high speed NAND-type Flash memory and capacitorless 1T-DRAM. In addition, a novel program mechanism that uses energy band engineered hot electrons (EBEHE) energized by sharp energy band bending at the edge of source/drain (S/D) is proposed for a high speed Flash memory programming operation. A short program time of 100ns and a low program voltage of 12V yield a Vth shift of 3.5V and a retention time exceeding 10years. For multifunctioning, the operation of a capacitorless 1T-DRAM is also demonstrated with a partially silicided DSSB in the same device.
- KSP Keywords
- 1T-DRAM, Energy band, Flash Memory, High Speed, Memory programming, Schottky barrier, Vth shift, band bending, dopant segregated, hot electrons, low program voltage