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Journal Article
E ects of the Crystalline Properties on the Dielectric Performances in Ba0:5Sr0:5TiO3 Thin Films
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- Authors
- S. H. Hong, I. R. Hwang, J. S. Choi, J. H. Lee, S. H. Kim, S. H. Jeon, Sung Oong Kang, Vadim Sh. Yalishev, B. H. Park, Dal-Hyun Kim, Young Ill Kim, S. E. Moon
- Issue Date
- 2008-02
- Citation
- Journal of the Korean Physical Society, v.52, no.2, pp.421-426
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- The ferroelectric material Ba0.5Sr0.5TiO3 (BST) is a most interesting material due to its large dielectric-constant change with the applied DC electric eld. In order to apply BST lms to tunable devices compatible with conventional Si-based electronic devices, we need BST lms with high tunability, low dielectric loss, and low temperature coecient of capacitance (TCC). We deposited epitaxial BST thin lms on LaAlO3(LAO) single-crystal substrates at 750℃ by using pulsed laser deposition (PLD). Then, we treated the BST lms by using a rapid thermal process for 3 min at 750℃ in an O2 atmosphere. After the annealing process, the BST lms showed enhanced dielectric properties, such as increased tunability values and decreased dielectric loss. These annealing eects on the dielectric performances are ascribed to an elongated in-plane lattice constant accompanying a strain relaxation and increased grain size.