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Charge Storage Effect on In2O3 Nanowires with Ruthenium Complex Molecules
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- Authors
- In Sung Choi, Jung Hyun Lee, Gun Ho Jo, Kyoung Ja Seo, Nak-Jin Choi, Tak Hee Lee, Hyo Young Lee
- Issue Date
- 2009-01
- Citation
- Applied Physics Express, v.2, no.1, pp.1-3
- ISSN
- 1882-0778
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Project Code
- 08SB1100, Development of smart molecular memory materials and devices, Hyoyoung Lee
- Abstract
- Charge storage effect on In2O3 nanowire field-effect transistors (FETs) is controlled by a chemical gate, ruthenlum(II) terpyridine (RuII-tpy) complex molecules. In2O3 nanowire FETs functionalized with a self-assembled monolayer of the molecules exhibit large hysteretic characteristics with regard to source-drain current vs gate voltage characteristics. The devices are operated with reversible switching behavior at gate voltage cycles of writing, reading, erasing, and reading, and their retention time is in excess of 1000s. These results reveal that the reversible chemical reaction (i.e., oxidation and reduction of the molecules) of RuII-tpy complexes produces a charging/discharging process of In2O3 nanowire FETs. © 2009 The Japan Society of Applied Physics.