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학술지 Charge Storage Effect on In2O3 Nanowires with Ruthenium Complex Molecules
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저자
최인성, 이정현, 조건호, 서경자, 최낙진, 이탁희, 이효영
발행일
200901
출처
Applied Physics Express, v.2 no.1, pp.1-3
ISSN
1882-0778
출판사
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/APEX.2.015001
협약과제
08SB1100, 기능성 분자메모리 소재 개발 및 소자구현 연구, 이효영
초록
Charge storage effect on In2O3 nanowire field-effect transistors (FETs) is controlled by a chemical gate, ruthenlum(II) terpyridine (RuII-tpy) complex molecules. In2O3 nanowire FETs functionalized with a self-assembled monolayer of the molecules exhibit large hysteretic characteristics with regard to source-drain current vs gate voltage characteristics. The devices are operated with reversible switching behavior at gate voltage cycles of writing, reading, erasing, and reading, and their retention time is in excess of 1000s. These results reveal that the reversible chemical reaction (i.e., oxidation and reduction of the molecules) of RuII-tpy complexes produces a charging/discharging process of In2O3 nanowire FETs. © 2009 The Japan Society of Applied Physics.
KSP 제안 키워드
Applied physics, Charge storage, Field-effect transistors(FETs), Nanowire FETs, Oxidation-reduction, Reversible chemical reaction, Ruthenium complexes, Source-drain current, Switching behavior, chemical reaction(Biomimetic), gate voltage