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Journal Article
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
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- Authors
- Woo-Seok Cheong, Chi-Sun Hwang, Jae-Heon Shin, Sang-Hee Ko Park, Sung-Min Yoon, Doo-Hee Cho, Min Ki Ryu, Chun-Won Byun, Shin Hyuk Yang, Hye Yong Chu, Kyoung Ik Cho
- Issue Date
- 2009-01
- Citation
- Journal of the Korean Physical Society, v.54, no.1, pp.473-477
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- Using an ionized physical vapor deposition (IPVD) apparatus, we formed a low-temperature silicon-oxide gate insulator (GI) for top-gate-type In-Ga-Zn oxide channel transparent thin-film transistors (IGZO-TTFTs) for the first time. IGZO-TTFTs with SiO?? GIs (100 nm) showed a low gate leakage current of about 10-12 A up to 30 V (gate voltage) comparable to an AlO?? GI fabricated by atomic layer deposition (ALD). However, it had a high drain off-current (~10-8 A) with a low drain current on-off ratio of ~10-2 A due to the inductively coupled plasma (ICP) stream during the IPVD-GI process. In order to protect an IGZO channel layer from the plasma effect, we deposited a shallow AlO?? (10 nm) layer on the IGZO by using ALD. Using this double-layered GI, a high mobility transistor (30.95 cm2/sV) with a drain current on-off ratio of ~106 could be achieved.
- KSP Keywords
- Atomic Layer Deposition, Channel layer, Double layered, Drain current, Ga-Zn, Gate insulator, High electron mobility transistor(HEMT), Inductively-coupled plasma(ICP), Ionized physical vapor deposition(IPVD), Low temperature(LT), Off Current