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Conference Paper Fabrication of High Performance Pentacene TFTs using TX100 in PVP Gate Dielectric
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Authors
Ki-Chul Song, Kyu-Ha Baek, Jae-Yeob Shim, Sung-Soo Park, Hong-Sik Shin, Do Jin Kim, Ki Jun Lee, Lee-Mi Do
Issue Date
2008-12
Citation
International Display Workshops (IDW) 2008, pp.715-716
Language
English
Type
Conference Paper
Abstract
We have fabricated high performance pentacene organic thin-film transistor (OTFT) using formulated poly(4-vinylphenol)(PVP) gate dielectric on glass substrate. The formulated gate dielectric layer was composed of PVP, poly(melamine-co-formaldehyde)(PMF) and Triton X-100 (TX-100). Electrical parameters such as carrier mobility of 0.15 cm 2 /Vs, on/off ratio of 10 5 , subthreshold slop of -1.1 V/decade and threshold voltage of -3.5 V have been obtained. The TX100 is a surfactant which is dispersed evenly and it makes good surface roughness and high performance of TFT.
KSP Keywords
4-vinyl phenol(Poly), Carrier mobility, Glass substrate, High performance, Organic thin-film transistors, Subthreshold slop, Surface roughness, TX-100, Thin-Film Transistor(TFT), Triton X-100, dielectric layer