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Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
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- Authors
- Jin-Wook Shin, Chel-Jong Choi, Moon Gyu Jang, Won-Ju Cho
- Issue Date
- 2008-12
- Citation
- IEEE Electron Device Letters, v.29, no.12, pp.1336-1339
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 × 10-5 A, and the on/off current ratio of 5 × 106. © 2008 IEEE.