상세정보
학술지
Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
- 저자
- 신진욱, 최철웅, 장문규, 조원주
- 발행일
- 200812
- 출처
- IEEE Electron Device Letters, v.29 no.12, pp.1336-1339
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 08MB1800, 유비쿼터스 단말용 부품 모듈, 김종대
- 초록
- N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 × 10-5 A, and the on/off current ratio of 5 × 106. © 2008 IEEE.
- KSP 제안 키워드
- Drive Current, Forming gas annealing, N-type, ON/OFF current ratio, Polycrystalline silicon(poly-Si), Schottky barrier, Thin-Film Transistor(TFT), annealing process, electrical characteristics, metallic junctions, phosphorous-doped