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학술지
Growth of CuInS2 Films by Using Spray Pyrolysis
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- 저자
- 김준호, Byeung Seon Yun, 송기봉
- 발행일
- 200811
- 출처
- Journal of the Korean Physical Society, v.53 no.5, pp.2453-2457
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 초록
- We have fabricated CuInS2 films by using chemical spray pyrolysis. CuInS2 (CIS) is a p-type lightabsorbing layer for high-efficiency solar cells. For CIS deposition, an aqueous solution containing ingredients of CuCl2, InCl3 and SC(NH2)2 was used. We have grown lms by varying the molar ratio of the ingredients and the substrate temperature. The sprayed films were characterized by using several measurement techniques, such as X-ray diffraction, UV-visible photospectroscopy, Raman spectroscopy and conductive atomic force microscopy. We observed that the Cu-to-In ratio had asignificant effect on the growth of thin films. The fabricated CIS films showed optical band gaps of 1.38 ∽ 1.42 eV, which depended on the crystallinity of the deposited films. The Raman spectral measurement showed a subtle signature of a secondary phase in the sprayed CIS lms, although it was largely composed of stoichiometric CIS phases. Atomic force microscopy measurements showed that the electric conductance was lower at the grain boundary than at the interior grain. The crystal structure and the phases composing the as-deposited film will be discussed based on the results of previous measurements.
- KSP 제안 키워드
- Aqueous solution, As-deposited film, Atomic force microscope(AFM), CIS films, Chemical spray pyrolysis, Field effect transistors(Substrate temperature), Molar ratio, Optical band gap, Raman spectroscopy, Solar Cells, Spectral measurement