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20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
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- Authors
- Moon Gyu Jang, Chel Jong Choi, Seong Jae Lee
- Issue Date
- 2008-11
- Citation
- Applied Physics Letters, v.93, no.19, pp.1-3
- ISSN
- 0003-6951
- Publisher
- American Institute of Physics (AIP)
- Language
- English
- Type
- Journal Article
- Abstract
- 20-nm -gate-length erbium-/platinum-silicided n-/ p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs) were manufactured. The manufactured 20-nm -gate-length n-p-type SB-MOSFETs showed large on/off current ratio (> 106) with low leakage current less than 10-5 μA/μm due to the existence of the Schottky barrier between source and channel region. The saturation currents were 550 and -376 μA/μm when drain and gate voltages are 2-2 and 3-3 V, for the n-p-type SB-MOSFET, respectively. © 2008 American Institute of Physics.
- KSP Keywords
- 3 V, AND gate, Barrier Metal, Field Effect Transistor(FET), Low leakage current, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), SB-MOSFET, Schottky barrier, on/off current ratio, p-Type