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학술지 Passivation of Bottom-Gate IGZO Thin Film Transistors
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저자
조두희, 양신혁, 신재헌, 변춘원, 유민기, 이정익, 황치선, 추혜용
발행일
200901
출처
Journal of the Korean Physical Society, v.54 no.1, pp.531-534
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.54.531
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We have studied transparent bottom-gate TFTs (thin film transistors) using amorphous IGZO (In-Ga-Zn-O) as an active channel material. The TFT devices had inverse co-planar structures. Source/drain and gate electrodes were constituted by ITO sputtered with a DC-RF magnetron sputter system, and an alkaline-free glass was used as a substrate. The gate insulator was Al2O 3 formed by using an atomic layer deposition (ALD) method at 150 °C. An active layer was formed by off-axis RF magnetron sputtering and post-annealing was performed with a hot plate or a vacuum oven. The field effect mobilities and the sub-threshold swings of the IGZO TFTs were 12 ~18 cm2/Vs and 0.2 ~ 0.6 V/dec, respectively. However, the hysteresis on I-V characteristics was relatively large without passivation. Thus, we passivated the TFT devices with inorganic and organic materials. After the organic passivation and post-heat treatments, the hysteresis was remarkably reduced without deterioration of the electrical characteristics.
KSP 제안 키워드
AND gate, Active Layer, Active channel, Atomic Layer Deposition, Bottom gate, Channel material, Co-Planar, Gate insulator, I-V characteristic(Transport property), IGZO TFTs, IGZO thin film