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Passivation of Bottom-Gate IGZO Thin Film Transistors
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- Authors
- D. H. Cho, S. H. Yang, J.-H. Shin, C. W. Byun, M. K. Ryu, J. I. Lee, C. S. Hwang, H. Y. Chu
- Issue Date
- 2009-01
- Citation
- Journal of the Korean Physical Society, v.54, no.1, pp.531-534
- ISSN
- 0374-4884
- Publisher
- 한국물리학회 (KPS)
- Language
- English
- Type
- Journal Article
- Abstract
- We have studied transparent bottom-gate TFTs (thin film transistors) using amorphous IGZO (In-Ga-Zn-O) as an active channel material. The TFT devices had inverse co-planar structures. Source/drain and gate electrodes were constituted by ITO sputtered with a DC-RF magnetron sputter system, and an alkaline-free glass was used as a substrate. The gate insulator was Al2O 3 formed by using an atomic layer deposition (ALD) method at 150 °C. An active layer was formed by off-axis RF magnetron sputtering and post-annealing was performed with a hot plate or a vacuum oven. The field effect mobilities and the sub-threshold swings of the IGZO TFTs were 12 ~18 cm2/Vs and 0.2 ~ 0.6 V/dec, respectively. However, the hysteresis on I-V characteristics was relatively large without passivation. Thus, we passivated the TFT devices with inorganic and organic materials. After the organic passivation and post-heat treatments, the hysteresis was remarkably reduced without deterioration of the electrical characteristics.
- KSP Keywords
- AND gate, Active Layer, Active channel, Atomic Layer Deposition, Bottom gate, Channel material, Co-Planar, Gate insulator, I-V characteristic(Transport property), IGZO TFTs, IGZO thin film