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학술지 Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States
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저자
신재헌, 황치선, 정우석, 박상희, 조두희, 유민기, 윤성민, 변춘원, 양신혁, 추혜용, 조경익
발행일
200901
출처
Journal of the Korean Physical Society, v.54 no.1, pp.527-530
ISSN
0374-4884
출판사
한국물리학회 (KPS)
DOI
https://dx.doi.org/10.3938/jkps.54.527
협약과제
08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
초록
We demonstrate that the current-voltage (I-V) characteristics of In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) can be modeled by using the well-known physical model based on the exponential density of deep and tail states. The threshold voltage and the voltage-dependent field-effect mobility can be determined without ambiguity by using the newly proposed scheme. Both the transfer and the output curves of the device are well reproduced by using the proposed modeling scheme with the obtained parameters.
KSP 제안 키워드
Analytical Modeling, Current-voltage (I-V) characteristics, In-Ga-Zn-O(IGZO), Initialization Vector(IV), Physical model, Thin-Film Transistor(TFT), exponential distribution, field-effect mobility, model-based, tail states, thin film(TF)