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Transparent Oxide Thin-Film Transistors Composed of Al and Sn-Doped Zinc Indium Oxide
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- Authors
- Doo Hee Cho, Shin Hyuk Yang, Chun Won Byun, Min Ki Ryu, Sang Hee Ko Park, Chi Sun Hwang, Sung Min Yoon, Hye Yong Chu
- Issue Date
- 2009-01
- Citation
- IEEE Electron Device Letters, v.30, no.1, pp.48-50
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We have fabricated the transparent bottom gate thin-film transistors (TFTs) using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and the AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing the In2O3 content and postannealing temperature up to 250 °C. The AT-ZIO TFT exhibited a field effect mobility of 30.2 cm2/Vs, a subthreshold swing of 0.17 V/dec, and an on/off current ratio of more than 102. © 2008 IEEE.
- KSP Keywords
- Active Layer, Bottom gate, Rf Magnetron sputtering, Room temperature, Sn-doped, Thin-Film Transistor(TFT), Transparent oxide, field-effect mobility, on/off current ratio, oxide thin-film transistors, subthreshold swing(SS)