상세정보
학술지
Transparent Oxide Thin-Film Transistors Composed of Al and Sn-Doped Zinc Indium Oxide
- 발행일
- 200901
- 출처
- IEEE Electron Device Letters, v.30 no.1, pp.48-50
- ISSN
- 0741-3106
- 출판사
- IEEE
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We have fabricated the transparent bottom gate thin-film transistors (TFTs) using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and the AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing the In2O3 content and postannealing temperature up to 250 °C. The AT-ZIO TFT exhibited a field effect mobility of 30.2 cm2/Vs, a subthreshold swing of 0.17 V/dec, and an on/off current ratio of more than 102. © 2008 IEEE.
- KSP 제안 키워드
- Active Layer, Bottom gate, ON/OFF current ratio, Room-temperature, Sn-doped, Thin-Film Transistor(TFT), Transparent oxide, field-effect mobility, oxide thin-film transistors, rf Magnetron sputtering, subthreshold swing(SS)