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Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
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- Authors
- Sung Jin Choi, Jin Woo Han, Sung Ho Kim, Moon Gyu Jang, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myeong Ho Song, Yun Chang Park, Jeoung Woo Kim, Yang Kyu Choi
- Issue Date
- 2009-01
- Citation
- IEEE Electron Device Letters, v.30, no.1, pp.78-81
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Project Code
- 08MB1800, Components/Module technology for Ubiquitous Terminals, Kim Jongdae
- Abstract
- A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (Vth) shift of 4.5 V is achieved in a fast programming time of 100 ns. © 2008 IEEE.
- KSP Keywords
- Fin width, Nand flash memory, Schottky barrier, band bending, hot electrons, low voltage, nm range, threshold voltage(Vth)