상세정보
학술지
Enhancement of Program Speed in Dopant-Segregated Schottky-Barrier (DSSB) FinFET SONOS for NAND-Type Flash Memory
- 저자
- 최성진, 한진우, 김성호, 장문규, 김진수, 김광희, 이기성, 오재섭, 송명호, 박윤창, 김정우, 최양규
- 발행일
- 200901
- 출처
- IEEE Electron Device Letters, v.30 no.1, pp.78-81
- ISSN
- 0741-3106
- 출판사
- IEEE
- 초록
- A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (Vth) shift of 4.5 V is achieved in a fast programming time of 100 ns. © 2008 IEEE.
- KSP 제안 키워드
- Fin width, Nand flash memory, Schottky barrier, band bending, hot electrons, low voltage, nm range, threshold voltage(Vth)