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High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors
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- Authors
- Kang-Jun Baeg, Dongyoon Khim, Dong-Yu Kim, Soon-Won Jung, Jae Bon Koo, In-Kyu You, Henry Yan, Antonio Facchetti, Yong-Young Noh
- Issue Date
- 2011-01
- Citation
- Journal of Polymer Science Part B : Polymer Physics, v.49, no.1, pp.62-67
- ISSN
- 0887-6266
- Publisher
- John Wiley & Sons
- Language
- English
- Type
- Journal Article
- Abstract
- Inkjet-printed high speed polymeric complementary circuits are fabricated using an n-type ([poly{[N,N??-bis(2-octyldodecyl)-naphthalene-1,4,5,8- bis(dicarboximide)-2,6-diyl]-alt-5,5??-(2,2??-dithiophene)} [P(NDI2OD-T2), Polyera ActivInk N2200] and two p-type polymers [poly(3-hexylthiophene) (P3HT) and a dithiophene-based polymer (Polyera ActivInk P2100)]. The top-gate/bottom-contact (TG/BC) organic field-effect transistors (OFETs) exhibit well-balanced and very-high hole and electron mobilities (μFET) of 0.2-0.5 cm2/Vs, which were enabled by optimization of the inkjet-printed active features, small contact resistance both of electron and hole injections, and effective control over gate dielectrics and its orthogonal solvent effect (selection of poly(methyl methacrylate) and 2-ethoxyethanol). Our first demonstrated inkjet-printed polymeric complementary devices have been integrated to high-performance complementary inverters (gain >30) and ring oscillators (oscillation frequency ~50 kHz). We believe that the operating frequency of printable organic circuits can be further improved more than 10 MHz by fine-tuning of the device architecture and optimization of the p- and n-channel semiconductor processing. © 2010 Wiley Periodicals, Inc.
- KSP Keywords
- 2-ethoxyethanol, Bottom contact, Complementary circuits, Complementary inverters, Contact resistance(73.40.Cg), Field Effect Transistor(FET), Fine-tuning, High Speed, High performance, Naphthalene-1, Operating frequency