상세정보
학술지
Fabrication of Morphological Defect-free Vertical electrodes Using (110) Silicon-on-Patterned-Insulator Process for Micromachined Capacitive Inclinometers
- 발행일
- 200902
- 출처
- Journal of Micromechanics and Microengineering, v.19 no.3, pp.1-7
- ISSN
- 0960-1317
- 출판사
- Institute of Physics (IOP)
- 협약과제
- 08MB1900, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
- 초록
- This paper presents a novel fabrication method of scalloping-free and footing-free vertical electrodes for micromachined capacitive inclinometers with a high sensing resolution. The proposed fabrication method is based on additional crystalline wet etching of a (1 1 0) silicon that is bonded to a silicon substrate with a patterned insulator layer. The sensing electrodes, which are aligned to the (1 1 1) plane, have very smooth sidewalls because the morphological defects formed by the silicon deep reactive ion etching (DRIE) process are drastically reduced in the crystalline wet etching. The fabricated capacitive inclinometer with smooth sensing electrodes was evaluated in terms of capacitance change and resolution. The capacitance of the fabricated inclinometer is changed from -0.246 to 0.258 pF for the inclination angle (-90째 to 90째). The temporal deviation of the capacitance is as small as 0.2 fF, which leads to a high resolution of 0.1째 or less for 45째. © 2009 IOP Publishing Ltd.
- KSP 제안 키워드
- Deep reactive ion etching, Defect-free, Fabrication method, High-resolution, Insulator layer, Morphological defects, Reactive ion etching(RIE), Sensing electrodes, Sensing resolution, Silicon substrate, Vertical electrodes