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Conference Paper Capacitive Micro Inclinometer with Scalloping-Free and Footing-Free Vertical Electrodes using Crystalline Etching of (110) Silicon
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Authors
Sung Sik Yun, Dae Hun Jeong, Jae Yong An, Min Ho Jun, Jong Hyun Lee, Chang Han Je, Myung Lae Lee, Gunn Hwang, Chang Auk Choi
Issue Date
2008-10
Citation
SENSORS 2008, pp.662-665
Language
English
Type
Conference Paper
DOI
https://dx.doi.org/10.1109/ICSENS.2008.4716528
Project Code
08MB1900, Development of CMOS based MEMS processed multi-functional sensor for ubiquitous environment, Chang Auck Choi
Abstract
A micromachined capacitive inclinometer has been developed to detect inclination angles for a position sensing application. In order to enhance resolution, a (110) crystalline silicon-on-patterned-insulator (COPI) process has been proposed to remove the morphologic defects such as footing and scalloping which were formed from silicon deep reactive ion etching (DRIE) process. The sidewalls fabricated by the (110) COPI process remarkably became vertical and flat with few nanometer roughness. The micro inclinometer with flat and vertical sensing electrodes was evaluated in terms of capacitance change and detection limit. The capacitance change of the fabricated device is from -0.246 to 0.258 pF for the inclination angle (-90째 to 90째). The temporal deviation of the capacitance is as small as 0.2 fF, which leads to 0.3 or less resolution for 짹70째. © 2008 IEEE.
KSP Keywords
Crystalline silicon, Deep reactive ion etching, Detection limit, Reactive ion etching(RIE), Sensing applications, Sensing electrode, Vertical electrodes, inclination angle, position sensing