ETRI-Knowledge Sharing Plaform

KOREAN
논문 검색
Type SCI
Year ~ Keyword

Detail

Conference Paper Electrical and Optical Properties of AlTiO Films
Cited - time in scopus Share share facebook twitter linkedin kakaostory
Authors
J. W. Lim, S. J. Yun, H. T. Kim
Issue Date
2009-02
Citation
한국반도체 학술 대회 (KCS) 2009, pp.1-2
Language
English
Type
Conference Paper
Abstract
In the growth of AlTiO films prepared by plasma enhanced atomic layer deposition (PEALD), electrical and optical properties were investigated in the present manuscript. The refractive index can be controlled by adjusting cycle combination of TiO2 and Al2O3 in PEALD. AlTiO films on Si substrate dramatically reduced reflectivity, thus the minimum reflectivity of nearly 0% was obtained. Another advantage of AlTiO film is nonlinear current-voltage behavior, which can be applied to protecting electronic circuit. The nonlinear coefficient values of 4.8 to 7.2 were obtained in single ATO films. The leakage current was gradually reduced as Ti content decreases.
KSP Keywords
Current-voltage behavior, Electrical and optical properties, Electronic circuit, Leakage current, Minimum reflectivity, Plasma-enhanced atomic layer deposition, Si substrate, Ti content, nonlinear coefficient, refractive index