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Journal Article Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film
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Authors
Chel Jong Choi, Ha Yong Yang, Hyo Bong Hong, Jin Gyu Kim, Sung Yong Chang, Jou Hahn Lee
Issue Date
2009-04
Citation
Microelectronics Reliability, v.49, no.4, pp.463-465
ISSN
0026-2714
Publisher
Elsevier
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1016/j.microrel.2008.12.014
Abstract
We have investigated the structural and electrical properties of metal-oxide-semiconductor (MOS) devices with Er metal gate on SiO2 film. Rapid thermal annealing (RTA) process leads to the formation of a high-k Er-silicate gate dielectric. The in situ high-voltage electron microscopy (HVEM) results show that thermally driven Er diffusion is responsible for the decrease in equivalent oxide thickness (EOT) with an increase in annealing temperature. The effective work function (過m,eff) of Er metal gate, extracted from the relations of EOT versus flat-band voltage (VFB), is calculated to be ~2.86 eV. © 2008 Elsevier Ltd. All rights reserved.
KSP Keywords
Annealing temperature, Er diffusion, Flat-band voltage, High-K, High-voltage electron microscopy, Metal gate, Metal-oxide(MOX), Metal-oxide-semiconductor (MOS) device, Structural and electrical properties, effective work function, electrical properties(I-V curve)