상세정보
학술지
Enhancement in Electron Transport and Light Emission Efficiency of a Si Nanocrystal Light-Emitting Diode by a SiCN/SiC Superlattice Structure
- 발행일
- 201301
- 출처
- Nanoscale Research Letters, v.8 no.1, pp.1-7
- ISSN
- 1931-7573
- 출판사
- Springer
- 협약과제
- 12SF1300, 시각 생체 모방 소자 및 인지 시스템 기술 개발, 정명애
- 초록
- We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED. © 2013 Huh et al.; licensee Springer.
- KSP 제안 키워드
- Conduction band offset, Emission Efficiency, Light Emission, Light output power(Lop), Light-emitting diodes (leds), Optical band gap, Si nanocrystal, SiC layer, Superlattice structure, Tunneling barrier height, Two-dimensional electron gas(2DEG)