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Enhancement in Electron Transport and Light Emission Efficiency of a Si Nanocrystal Light-Emitting Diode by a SiCN/SiC Superlattice Structure
- Authors
- Chul Huh, Bong Kyu Kim, Byoung-Jun Park, Eun-Hye Jang, Sang-Hyeob Kim
- Issue Date
- 2013-01
- Citation
- Nanoscale Research Letters, v.8, no.1, pp.1-7
- ISSN
- 1931-7573
- Publisher
- Springer
- Language
- English
- Type
- Journal Article
- Abstract
- We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED. © 2013 Huh et al.; licensee Springer.
- KSP Keywords
- Barrier height(BH), Conduction band offset, Electrical properties, Emission efficiency, Highly efficient, Light emission, Light output power, Optical band gap, Si nanocrystal, SiC layer, Superlattice structure
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
