ETRI-Knowledge Sharing Plaform

ENGLISH

성과물

논문 검색
구분 SCI
연도 ~ 키워드

상세정보

학술지 Enhancement in Electron Transport and Light Emission Efficiency of a Si Nanocrystal Light-Emitting Diode by a SiCN/SiC Superlattice Structure
Cited 7 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
저자
허철, 김봉규, 박병준, 장은혜, 김상협
발행일
201301
출처
Nanoscale Research Letters, v.8 no.1, pp.1-7
ISSN
1931-7573
출판사
Springer
DOI
https://dx.doi.org/10.1186/1556-276X-8-14
협약과제
12SF1300, 시각 생체 모방 소자 및 인지 시스템 기술 개발, 정명애
초록
We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED. © 2013 Huh et al.; licensee Springer.
키워드
Electron transport, Light-emitting diode, Si nanocrystal, Superlattice, Wall-plug efficiency
KSP 제안 키워드
Conduction band offset, Emission Efficiency, Light Emission, Light output power(Lop), Light-emitting diodes (leds), Optical band gap, Si nanocrystal, SiC layer, Superlattice structure, Tunneling barrier height, Two-dimensional electron gas(2DEG)