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Enhancement in Electron Transport and Light Emission Efficiency of a Si Nanocrystal Light-Emitting Diode by a SiCN/SiC Superlattice Structure
- Authors
- Chul Huh, Bong Kyu Kim, Byoung-Jun Park, Eun-Hye Jang, Sang-Hyeob Kim
- Issue Date
- 2013-01
- Citation
- Nanoscale Research Letters, v.8, no.1, pp.1-7
- ISSN
- 1931-7573
- Publisher
- Springer
- Language
- English
- Type
- Journal Article
- Abstract
- We report an enhancement in light emission efficiency of Si nanocrystal (NC) light-emitting diodes (LEDs) by employing 5.5 periods of SiCN/SiC superlattices (SLs). SiCN and SiC layers in SiCN/SiC SLs were designed by considering the optical bandgap to induce the uniform electron sheet parallel to the SL planes. The electrical property of Si NC LED with SiCN/SiC SLs was improved. In addition, light output power and wall-plug efficiency of the Si NC LED with SiCN/SiC SLs were also enhanced by 50% and 40%, respectively. This was attributed to both the formation of two-dimensional electron gas, i.e., uniform electron sheet parallel to the SiCN/SiC SL planes due to the conduction band offset between the SiCN layer and SiC layer, and an enhanced electron transport into the Si NCs due to a lower tunneling barrier height. We show here that the use of the SiCN/SiC SL structure can be very useful in realizing a highly efficient Si NC LED. © 2013 Huh et al.; licensee Springer.
This work is distributed under the term of Creative Commons License (CCL)
(CC BY)
(CC BY)
