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Journal Article Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications
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Authors
Sung Min Yoon, Soon Won Jung, Seung Yun Lee, Young Sam Park, Byoung Gon Yu
Issue Date
2009-04
Citation
IEEE Electron Device Letters, v.30, no.4, pp.371-373
ISSN
0741-3106
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LED.2009.2013879
Abstract
A new device concept for a programmable switch employing a phase-change memory element was proposed, in which a unique four-terminal structure having two operating channels was so designed as to effectively separate two functions of programming and pass-gating. The proposed device was successfully fabricated, and its operational behaviors were demonstrated. © 2009 IEEE.
KSP Keywords
Nonvolatile logic, Phase Change Material(PCM), memory element, new device, terminal structure