상세정보
학술지
Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials
- 발행일
- 200912
- 출처
- ETRI Journal, v.31 no.6, pp.703-708
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 협약과제
- 09MB1600, 유비쿼터스용 CMOS 기반 MEMS 복합센서기술개발, 최창억
- 초록
- Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film. Copyright © 2009 ETRI.
- KSP 제안 키워드
- 1/f Noise, Alloy films, Infrared detection, Material parameter, Noise characteristics, Parameter K, Si film, Si-based, Silicon film, Sputtering conditions, amorphous silicon