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Journal Article Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials
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Authors
Ho Jun Ryu, Se In Kwon, Sang Hoon Cheon, Seong Mok Cho, Woo Seok Yang, Chang Auck Choi
Issue Date
2009-12
Citation
ETRI Journal, v.31, no.6, pp.703-708
ISSN
1225-6463
Publisher
한국전자통신연구원 (ETRI)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.4218/etrij.09.1209.0014
Project Code
09MB1600, Development of CMOS based MEMS processed multi-functional sensor for ubiquitous environment, Chang Auck Choi
Abstract
Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film. Copyright © 2009 ETRI.
KSP Keywords
1/f Noise, Alloy films, Infrared detection, Material parameter, Noise characteristics, Parameter K, Si film, Si-based, Silicon film, Sputtering conditions, amorphous silicon