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Journal Article
Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials
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- Authors
- Ho Jun Ryu, Se In Kwon, Sang Hoon Cheon, Seong Mok Cho, Woo Seok Yang, Chang Auck Choi
- Issue Date
- 2009-12
- Citation
- ETRI Journal, v.31, no.6, pp.703-708
- ISSN
- 1225-6463
- Publisher
- 한국전자통신연구원 (ETRI)
- Language
- English
- Type
- Journal Article
- Project Code
- 09MB1600, Development of CMOS based MEMS processed multi-functional sensor for ubiquitous environment, Chang Auck Choi
- Abstract
- Silicon antimony films are studied as resistors for uncooled microbolometers. We present the fabrication of silicon films and their alloy films using sputtering and plasma-enhanced chemical vapor deposition. The sputtered silicon antimony films show a low 1/f noise level compared to plasma-enhanced chemical vapor deposition (PECVD)-deposited amorphous silicon due to their very fine nanostructure. Material parameter K is controlled using the sputtering conditions to obtain a low 1/f noise. The calculation for specific detectivity assuming similar properties of silicon antimony and PECVD amorphous silicon shows that silicon antimony film demonstrates an outstanding value compared with PECVD Si film. Copyright © 2009 ETRI.
- KSP Keywords
- 1/f Noise, Alloy films, Infrared detection, Material parameter, Noise characteristics, Parameter K, Si film, Si-based, Silicon film, Sputtering conditions, amorphous silicon