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Journal Article High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators
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Authors
Cheong Woo-Seok, Yoon Sung Min, Hwang Chi-Sun, Chu Hye Yong
Issue Date
200904
Source
Japanese Journal of Applied Physics, v.48 no.4, pp.1-15
ISSN
0021-4922
Publisher
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
DOI
https://dx.doi.org/10.1143/JJAP.48.04C090
Project Code
08MB2100, Smart window with transparent electronic devices, Cho Kyoung Ik
Abstract
Using a double-layered gate insulator [SiO2 (100 nm)/Al 2O3 (10 nm)] and a dry-etching process for the channel layer, we could obtain high mobility top-gate SnO2 and ZnO-SnO 2 (ZTO) transparent thin-film transistor (TTFT). After annealing at 300 °C, for 1 h in O2 ambient, the saturated mobility of SnO 2 TTFT was 17.4cm2 s-1 V-1, and that of ZTO TTFT was 50.4cm2 s-1 V-1. Generally, both devices operated in the enhancement mode with a drain current on-off ratio of ??106. © 2009 The Japan Society of Applied Physics.
KSP Keywords
1 H, Applied physics, Channel layer, Double layered, Drain current, Etching process, First Stokes(S1), Gate insulator, High Mobility, Thin-Film Transistor(TFT), ZnO-SnO 2