상세정보
학술지
Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method
- 발행일
- 200904
- 출처
- Japanese Journal of Applied Physics, v.48 no.4, pp.04C089-1-04C089-5
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- In this study, for the first time, Ag-doped SnO2 and Mo-doped ZnO films for transparent electrodes was explored by using a direct cosputtering method in a non-oxidizing atmosphere, and successfully applied to source and drain electrodes of transparent thin-film transistors. Ag (??4%)-doped SnO 2 films has the low resistivity of 3:8 ?? 10-4 ?뎑m, but the relatively low transmittance of ??50%, after 300 °C for 1 h post-annealing in an O2 ambient. On the other hand, a shallow coating of Mo (2.3 nm) on Mo-doped ZnO electrode caused a hard-saturation behavior even at the low drain voltage (??2 V), which can provide effective tools to current-driving devices, for example, active matrix-organic light emitting display (AM-OLED). © 2009 The Japan Society of Applied Physics.
- KSP 제안 키워드
- 1 H, AM-OLED, Ag-doped, Applied physics, Co-sputtering method, Doped oxide, Doped znO films, Low Drain Voltage, Low transmittance, Metal-doped, Mo-doped ZnO(ZnO:Mo)