상세정보
학술지
Fabrication of P-Type ZnO Thin Films Using Rf-Magnetron Sputter Deposition
- 발행일
- 200904
- 출처
- Electrochemical and Solid-State Letters, v.12 no.4, pp.H109-H112
- ISSN
- 1099-0062
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 08IB2600, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
- 초록
- p-Type ZnO thin films were prepared on phosphorus (P)-doped poly-Si by sputter deposition under various ambient ratios of Ar and O2 and subsequent annealing process at temperatures ranging from 400 to 600°C. The effects of the ambient sputtering gas and annealing temperature on the electrical and material characteristics of ZnO films were investigated. The formation of p-ZnO film on P-doped poly-Si was confirmed through comparisons involving the conduction type of the ZnO film deposited on insulating SiO 2. The film deposited in Ar ambient and annealed at 500°C showed a maximum hole concentration of 5.92 × 1019cm-3. © 2009 The Electrochemical Society.
- KSP 제안 키워드
- Annealing temperature, Doped poly-Si, Hole concentration, Material characteristics, P-doped, Polycrystalline silicon(poly-Si), RF-magnetron sputter deposition, SiO 2, ZnO films, ZnO thin films, annealing process