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Journal Article Fabrication of P-Type ZnO Thin Films Using Rf-Magnetron Sputter Deposition
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Authors
Jun Kwan Kim, Jung Wook Lim, Hyun Tak Kim, Sang Hoon Kim, Sun Jin Yun
Issue Date
2009-04
Citation
Electrochemical and Solid-State Letters, v.12, no.4, pp.H109-H112
ISSN
1099-0062
Publisher
Electrochemical Society (ECS)
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1149/1.3067756
Abstract
p-Type ZnO thin films were prepared on phosphorus (P)-doped poly-Si by sputter deposition under various ambient ratios of Ar and O2 and subsequent annealing process at temperatures ranging from 400 to 600°C. The effects of the ambient sputtering gas and annealing temperature on the electrical and material characteristics of ZnO films were investigated. The formation of p-ZnO film on P-doped poly-Si was confirmed through comparisons involving the conduction type of the ZnO film deposited on insulating SiO 2. The film deposited in Ar ambient and annealed at 500°C showed a maximum hole concentration of 5.92 × 1019cm-3. © 2009 The Electrochemical Society.
KSP Keywords
Annealing temperature, Doped poly-Si, Material characteristics, P-doped, Polycrystalline silicon(poly-Si), RF-magnetron sputter deposition, SiO 2, ZnO films, ZnO thin films, annealing process, hole concentration