상세정보
학술지
Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
- 저자
- 신진욱, 최철종, 장문규, 조원주
- 발행일
- 200904
- 출처
- Japanese Journal of Applied Physics, v.48 no.4, pp.1-4
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 09MB3300, 자가충전 전원모듈 기반 EPMIC 기술개발, 김종대
- 초록
- Schottky barrier thin-film transistors (SB-TFT) based on polycrystalline silicon (poly-Si) films crystallized by solid phase crystallization (SPC) and excimer laser annealing (ELA) methods were fabricated for system-on-glass (SOG) application. The structure of poly-Si films by ELA and SPC methods was analyzed. The formations of platinum silicide and erbium silicide were developed for p- and n-channel metallic junctions, respectively. The fabricated SB-TFTs have a large on/off current ratio with a low leakage current. The effects of forming gas annealing (FGA) in 2% H2/N2 gas ambient were evaluated. As a result of FGA, significant improvements of electrical characteristics were obtained due to reduction of trap states. © 2009 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Applied physics, Erbium silicide, Forming gas annealing, Gas ambient, N-channel, ON/OFF current ratio, P-Channel, Polycrystalline silicon(poly-Si), Schottky barrier, Si film, Solid-phase crystallization(SPC)