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Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
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- Authors
- Jin Wook Shin, Chel Jong Choi, Moon Gyu Jang, Won Ju Cho
- Issue Date
- 2009-04
- Citation
- Japanese Journal of Applied Physics, v.48, no.4, pp.1-4
- ISSN
- 0021-4922
- Publisher
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- Language
- English
- Type
- Journal Article
- Abstract
- Schottky barrier thin-film transistors (SB-TFT) based on polycrystalline silicon (poly-Si) films crystallized by solid phase crystallization (SPC) and excimer laser annealing (ELA) methods were fabricated for system-on-glass (SOG) application. The structure of poly-Si films by ELA and SPC methods was analyzed. The formations of platinum silicide and erbium silicide were developed for p- and n-channel metallic junctions, respectively. The fabricated SB-TFTs have a large on/off current ratio with a low leakage current. The effects of forming gas annealing (FGA) in 2% H2/N2 gas ambient were evaluated. As a result of FGA, significant improvements of electrical characteristics were obtained due to reduction of trap states. © 2009 The Japan Society of Applied Physics.
- KSP Keywords
- Applied physics, Electrical characteristics, Erbium silicide, Excimer laser annealing, Gas ambient, Low leakage current, P-Channel, Polycrystalline silicon(poly-Si), Schottky barrier, Si film, Thin-Film Transistor(TFT)