ETRI-Knowledge Sharing Plaform



논문 검색
구분 SCI
연도 ~ 키워드


학술지 Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge-Sb-Te Films
Cited 1 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
윤성민, 이승윤, 정순원, 박영삼, 유병곤
Japanese Journal of Applied Physics, v.48 no.4, pp.1-6
Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
A unique and novel phase-change memory device employing multilayered chalcogenide films was proposed and fabricated. In this structure, Ge 18Sb39Te43, which corresponds to a 22 at.% Sb-excessive phase of typical stoichiometric Ge2Sb2Te 5 (GST), was located in the middle and acted as the main operating region to exploit its superior properties, thus ensuring reliable memory operations. Thinner GST layers were inserted to above and below the middle layer. The introduction of a bottom GST layer promotes the temperature rise and the thermal insulation within the device operating volume owing to its lower thermal conductivity. The top GST layer effectively suppresses the undesirable interdiffusion between the top electrode of W and the Sb added to excess. Moreover, the upper and lower GST supplementary layers promote the initial crystallization stage during set operations owing to their higher crystallization rate compared with that of the Sbrich phase of GST. As a result, the required current for reset, the required time for set, and the number of rewritable cycles of the proposed device with an active pore size of 0:5 μm2 were 6.1 mA, 80 ns, and 6:4 106, respectively, which are superior values compared with those for the device using a single layer of Ge18Sb39Te43. We can conclude that the proposed multilayered structure of compositionally modified GST films provides a very promising approach to enhancing all types of the memory behaviors required for the phase-change memory devices. ©2009 The Japan Society of Applied Physics.
KSP 제안 키워드
Active pore size, Applied physics, Chalcogenide films, Ge-Sb-Te, Memory behavior, Operating region, Phase Change Material(PCM), Single-layer, Temperature Rise, crystallization rate, memory device