상세정보
학술지
Vanadium Dioxide and Vanadium Sesquioxide Thin Films Fabricated on (0001) or (10 10)Al2O3 by Reactive RF-Magnetron Sputter Deposition and Subsequent Annealing Processes
- 발행일
- 200904
- 출처
- Japanese Journal of Applied Physics, v.48 no.4, pp.1-4
- ISSN
- 0021-4922
- 출판사
- Japan Society of Applied Physics (JSAP), Institute of Physics (IOP)
- 협약과제
- 08MB3100, 전기적 점프(Current Jump)를 이용한 신소자 기술, 김현탁
- 초록
- Vanadium dioxide (VO2) and vanadium sesquioxide (V 2O3) thin films showing an abrupt metal-insulator transition near their typical critical temperature (TC) were successfully fabricated by reactive RF magnetron sputter deposition and subsequent annealing processes. The annealing processes for preparing VO 2 and V2O3 films were carried out in 30 mTorr O2 ambient and at a very low pressure (2 × 10-6 Torr), respectively. V2O3 films could be fabricated by the one-step annealing of as-deposited VOx films in contrast to the V2O3 fabrication by the two-step annealing of sol-gel V2O5 films. The annealing temperature for preparing V 2O3 films (?돟550 °C) was much lower than those reported in earlier works. The dependence of TC on the surface orientation of a single crystalline Al2O3 substrate was also shown for VO2 and V2O3 films. The films fabricated on (1010)-plane Al2O3 substrate showed superior characteristics to those on (0001)-Al2O3. © 2009 The Japan Society of Applied Physics.
- KSP 제안 키워드
- Annealing temperature, Applied physics, As-deposited, Critical temperature, One-step, RF-magnetron sputter deposition, Reactive RF magnetron sputter, Single-crystalline, Sol-Gel, Two-step annealing, V2O5 films