ETRI-Knowledge Sharing Plaform



논문 검색
구분 SCI
연도 ~ 키워드


학술지 Enhancement in the Gain of Quantum Dot Laser by Increasing Overlap Integral between Electron and Hole Wave-Functions
Cited 4 time in scopus Download 0 time Share share facebook twitter linkedin kakaostory
조병구, 양용신, 김재수, 고명숙, 이광재, 이철로, 김진수, 최병석, 오대곤, 임재영, 김종수
Thin Solid Films, v.517 no.14, pp.3983-3986
We report the influences of quantum dot (QD) shape on the lasing characteristics such as threshold current, slope efficiency, and wavelength stability. The average heights of the shape-engineered InAs/InAlGaAs QDs (SEQDs) and the conventionally-grown Stranski-Krastanov InAs QDs (CQD) were 10 짹 0.5 and 2.5 짹 0.5혻nm, respectively. For the cavity length of 0.5혻mm, the threshold current of the laser diodes (LDs) with the InAs/InAlGaAs SEQDs as an active layer (SEQD-LD) was decreased by 3.6 times smaller than that of the LDs with the InAs CQDs (CQD-LD). Also the slope efficiency for the SEQD-LD was increased to 0.15 from 0.087혻W/A of the CQD-LD. While the lasing wavelength of the CQD-LD was red-shifted by 0.032혻μm with increasing cavity length from 0.5 to 0.75혻mm, the lasing emission of the SEQD-LD was red-shifted only by 0.012혻μm with increasing cavity length from 0.5 to 1.5혻mm. From these results, the gain of the QDLDs was enhanced by increasing the height of the QDs due to the enhancement in the confinement of the carrier wave-functions. © 2009 Elsevier B.V. All rights reserved.
KSP 제안 키워드
Active Layer, Carrier wave, Cavity length, InAs QDs, Laser diode(LD), Lasing characteristics, Shape-engineered, Slope efficiency, Stranski-Krastanov, Threshold current, Wavelength stability