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Journal Article
X-대역 12-W 급 고출력증폭기 MMIC 개발
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- Issue Date
- 2009-08
- Citation
- 한국군사과학기술학회지, v.12, no.4, pp.446-451
- ISSN
- 1598-9127
- Publisher
- 한국군사과학기술학회(KIMST)
- Language
- Korean
- Type
- Journal Article
- Abstract
- In this paper, we described the design and test results of a high output power amplifier MMIC developed by using 0.5um power pHEMT processes on a 6-inch GaAs wafer for the X-band T/R module application. In the MMIC design, we have used a simple on-chip gate active bias technology to compensate the threshold-voltage variation of pHEMT during the fabrication process and 16-to-1 power combining method to achieve the output power over 10watt. The fabricated chip has an output power over 12watts and maximum PAE of 32% over the frequency range of fo +/-750㎒.
- KSP Keywords
- Active bias, Design and test, Frequency Range, GaAs wafer, High output power, On-chip, Power amplifier MMIC, T/R Module, bias technology, fabrication process, power amplifiers(PAs)