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Journal Article
Effect of UV/ozone Treatment on Hysteresis of Pentacene Thin-Film Transistor with Polymer Gate Dielectric
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- Authors
- Jae Bon Koo, Seong Yeol Kang, In Kyu You, Kyung Soo Suh
- Issue Date
- 2009-05
- Citation
- Solid-State Electronics, v.53, no.6, pp.621-625
- ISSN
- 0038-1101
- Publisher
- Elsevier
- Language
- English
- Type
- Journal Article
- Abstract
- Pentacene organic thin-film transistors (OTFTs) having acrylic polymer gate dielectric were fabricated with the change of UV/ozone treatment on the surface of gate dielectric. As UV/ozone exposure time increased, threshold voltage was shifted towards positive values from -0.7 V to 6.2 V and saturation mobility was dramatically increased from 0.07 cm2/Vs to 2.66 cm2/Vs while the amount of hysteresis was enlarged. The increase of hysteresis and the non-saturation behavior of output characteristics were attributed to the generation of hydroxyl groups through polymer dissociation during UV/ozone treatment because the hydroxyl groups making the surface of polymer gate dielectric more polar played as electron traps. © 2009 Elsevier Ltd. All rights reserved.
- KSP Keywords
- Electron traps, Exposure time, Non-saturation, Organic thin-film transistors (otfts), Saturation mobility, Thin-Film Transistor(TFT), UV/Ozone treatment, acrylic polymer, gate dielectric, hydroxyl group, organic thin film transistor(OTFT)