상세정보
학술지
Low-Frequency Noise in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors
- 발행일
- 200905
- 출처
- IEEE Electron Device Letters, v.30 no.5, pp.505-507
- ISSN
- 0741-3106
- 출판사
- IEEE
- 초록
- We have investigated the low-frequency noise (LFN) properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) as a function of frequency, bias, and channel length of devices. The measured noise power spectral density of drain current (SiD) shows that the low-frequency noise in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., it fits well to a 1/f款 power law with 款 ~ 1 in the frequency range of 10 Hz to 1 kHz. From the dependence of normalized noise power spectral density (SiD/ID2) on the gate voltage, mobility fluctuation is considered as a dominant LFN mechanism in a-IGZO TFTs. The magnitude of SiD/ID2 is inversely proportional to the channel length of devices, which indicates that contact noise is insignificant in a-IGZO TFTs. © 2009 IEEE.
- KSP 제안 키워드
- 1/f Noise, Channel Length, Drain current, Frequency Range, Low frequency noise, Noise power, Normalized noise, Thin-Film Transistor(TFT), Zinc oxide(ZnO), a-IGZO TFTs, amorphous indium-gallium-zinc oxide(a-IGZO)