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Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors
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- Authors
- Jeong Min Lee, Woo Seok Cheong, Chi Sun Hwang, In Tak Cho, Hyuck In Kwon, Jong Ho Lee
- Issue Date
- 2009-05
- Citation
- IEEE Electron Device Letters, v.30, no.5, pp.505-507
- ISSN
- 0741-3106
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We have investigated the low-frequency noise (LFN) properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) as a function of frequency, bias, and channel length of devices. The measured noise power spectral density of drain current (SiD) shows that the low-frequency noise in a-IGZO TFTs obeys the classical 1/f noise theory, i.e., it fits well to a 1/f款 power law with 款 ~ 1 in the frequency range of 10 Hz to 1 kHz. From the dependence of normalized noise power spectral density (SiD/ID2) on the gate voltage, mobility fluctuation is considered as a dominant LFN mechanism in a-IGZO TFTs. The magnitude of SiD/ID2 is inversely proportional to the channel length of devices, which indicates that contact noise is insignificant in a-IGZO TFTs. © 2009 IEEE.
- KSP Keywords
- 1/f Noise, Channel Length, Drain current, Frequency Range, Low frequency noise, Noise power, Normalized noise, Thin-Film Transistor(TFT), Zinc oxide(ZnO), a-IGZO TFTs, amorphous indium-gallium-zinc oxide(a-IGZO)