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학술지 Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
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저자
문란주, 정명일, S.V. Jagdeesh Chandra, 심규환, 장문규, 홍효봉, 장성영, 최철종
발행일
200905
출처
Journal of the Electrochemical Society, v.156 no.8, pp.H621-H624
ISSN
0013-4651
출판사
Electrochemical Society (ECS)
DOI
https://dx.doi.org/10.1149/1.3138704
협약과제
09ZH1300, ETRI 연구역량 강화를 위한 R&D체계 구축 및 Seed형 기술개발을 위한 창의형 연구 사업, 현창희
초록
We investigated the electrical and structural properties of p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs), which were fabricated using platinum (Pt) silicidation through an oxide technique coupled with rapid thermal annealing or furnace annealing process. The furnace-annealed SB-MOSFETs showed a larger on/off current ratio (> 106) with a lower reverse leakage current level (< 10-8 μA/μm) compared with the rapid-thermal-annealed ones. The superior device performance of the furnace-annealed SB-MOSFETs could be attributed to the smooth surface morphology and excellent interface uniformity of PtSi films in source/drain regions, caused by a densified Si Ox interlayer to effectively control the Pt flux toward the silicon-on-insulator film. © 2009 The Electrochemical Society.
KSP 제안 키워드
Barrier Metal, Coupled with, Electrical and structural properties, Field-effect transistors(FETs), Furnace annealing, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), ON/OFF current ratio, Reverse leakage current, Schottky barrier, Silicidation through oxide