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Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
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- Authors
- Ran Ju Moon, Myeong II Jeong, S. V. Jagdeesh Chandra, Kyu Hwan Shim, Moon Gyu Jang, Hyo Bong Hong, Sung Yong Chang, Chel Jong Choi
- Issue Date
- 2009-05
- Citation
- Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624
- ISSN
- 0013-4651
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- We investigated the electrical and structural properties of p-type Schottky barrier metal-oxide-semiconductor field-effect transistors (SB-MOSFETs), which were fabricated using platinum (Pt) silicidation through an oxide technique coupled with rapid thermal annealing or furnace annealing process. The furnace-annealed SB-MOSFETs showed a larger on/off current ratio (> 106) with a lower reverse leakage current level (< 10-8 μA/μm) compared with the rapid-thermal-annealed ones. The superior device performance of the furnace-annealed SB-MOSFETs could be attributed to the smooth surface morphology and excellent interface uniformity of PtSi films in source/drain regions, caused by a densified Si Ox interlayer to effectively control the Pt flux toward the silicon-on-insulator film. © 2009 The Electrochemical Society.
- KSP Keywords
- Barrier Metal, Coupled with, Electrical and structural properties, Field-effect transistors(FETs), Furnace annealing, Metal-oxide(MOX), Metal-oxide-semiconductor field-effect transistor(MOSFET), ON/OFF current ratio, Reverse leakage current, Schottky barrier, Silicidation through oxide