상세정보
학술지
Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films
- 발행일
- 201105
- 출처
- Journal of the Electrochemical Society, v.158 no.7, pp.D430-D434
- ISSN
- 0013-4651
- 출판사
- Electrochemical Society (ECS)
- 협약과제
- 10MB6100, 광캡쳐 구조 반사방지막 및 조성기울기를 갖는 Si/SiGe 박막 태양전지 기술 개발, 윤선진
- 초록
- Hydrogenated intrinsic Si (Si:H) thin films were deposited by a plasma-enhanced chemical vapor deposition technique, and the effect of the SiH4 flow rate ([SiH4]) and hydrogen dilution ratio (R) on the crystalline phase transition was studied using Raman spectroscopy and high-resolution transmission electron microscopy. The crystalline volume fraction (Xc) was strongly affected by [SiH4] as well as R, and higher Xc could be achieved by using a lower [SiH4] at the same R. The dependence of phase transition on the crystallinity of the under-lying layer was also investigated by depositing Si:H films on various substrates. To evaluate the effects of [SiH4] and R on the quality of amorphous-Si:H (a-Si:H) films, etch rates and absorption coefficients were obtained by an H2-plasma etching process and UV-Vis spectrophotometry, respectively. Even under the deposition condition resulting in a-Si:H films, the deposition rate decreased by a factor of 3 to 4.6, and the film density considerably increased as R increased from 4 to 19. On the other hand, the absorption coefficient very slightly decreased with R. The presence of microcrystalline Si:H could be observed only from the samples deposited with R19 when the film was deposited on amorphous substrate. © 2011 The Electrochemical Society.
- KSP 제안 키워드
- Absorption Coefficient, Crystalline phase transition, Crystalline volume fraction, Deposition conditions, Effect of deposition, Etch rates, Film density, Flow rate, Hydrogen dilution ratio, Microcrystalline Si, Plasma etching process