상세정보
학술지
Optimization of Amorphous In-Ga-Zn-Oxide Semiconductor for the Top-Gate Transparent Thin-Film Transistor
- 발행일
- 200905
- 출처
- Journal of the Korean Physical Society, v.54 no.5, pp.1879-1884
- ISSN
- 0374-4884
- 출판사
- 한국물리학회 (KPS)
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We developed methods for a process optimization of amorphous In-Ga-Zn-oxide (IGZO, atomic ratio of the IGZO target 0 In : Ga : Zn = 1 : 1 : 1) for transparent thin-film transistors (TTFTs). During the sputtering process, the ratio of oxygen to the total gas mixture could be chosen in order to obtain better electronic properties, depending on both the RF power and the sputtering pressure. The post-anneal treatment at 300 °C for 1 hour in an O2 ambient was the most suitable condition for the interface between the IGZO channel and the AI2O3 gate insulator Finally, the introduction of a first step (FS) during the deposition was very effective in improving the electronic properties of the top-gate IGZO-TTFTs. Through these optimization methods, we achieved a field effect mobility of 11.7 cm 2/sV, a sub-threshold-swing of 0.36 and a drain current on-off ratio of ??108 in the top-gate IGZO-TTFT.