상세정보
학술지
36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD
- 발행일
- 200905
- 출처
- IEEE Photonics Technology Letters, v.21 no.10, pp.672-674
- ISSN
- 1041-1135
- 출판사
- IEEE
- 협약과제
- 08MB1600, 실리콘 기반 초고속 광인터커넥션 IC, 김경옥
- 초록
- We present high-speed Ge p-i-n photodetectors for vertical incidence with high responsivity, grown by reduced pressure chemical vapor deposition. From the high-resolution X-ray diffraction analysis, the Ge epilayer shows good crystalline homogeneity and the residual tensile strain of 0.16%. The fabricated device exhibits the 3-dB bandwidth of 36 GHz, the responsivity of 0.47 A/W, and low dark current of 42 nA at {\\lambda} ~ 1.55 μm. The same device also shows the responsivity of 0.7 A/W at {\\lambda} ~ 1.31 μm. The on-chip measurement of the eye diagram shows a good opening at 40-Gb/s data transmission. © 2009 IEEE.
- KSP 제안 키워드
- 3-dB bandwidth, 6 GHz, Data transmission, Eye Diagram, Ge photodetectors, High Speed, High-resolution X-ray diffraction, Low dark current, Reduced pressure chemical vapor deposition, X-ray diffraction analysis, high responsivity