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36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD
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- Authors
- Dong Woo Suh, Sang Hoon Kim, Ji Ho Joo, Gyung Ock Kim
- Issue Date
- 2009-05
- Citation
- IEEE Photonics Technology Letters, v.21, no.10, pp.672-674
- ISSN
- 1041-1135
- Publisher
- IEEE
- Language
- English
- Type
- Journal Article
- Abstract
- We present high-speed Ge p-i-n photodetectors for vertical incidence with high responsivity, grown by reduced pressure chemical vapor deposition. From the high-resolution X-ray diffraction analysis, the Ge epilayer shows good crystalline homogeneity and the residual tensile strain of 0.16%. The fabricated device exhibits the 3-dB bandwidth of 36 GHz, the responsivity of 0.47 A/W, and low dark current of 42 nA at {\\lambda} ~ 1.55 μm. The same device also shows the responsivity of 0.7 A/W at {\\lambda} ~ 1.31 μm. The on-chip measurement of the eye diagram shows a good opening at 40-Gb/s data transmission. © 2009 IEEE.
- KSP Keywords
- 3-dB bandwidth, 6 GHz, Data transmission, Diffraction analysis, Eye diagram, Ge photodetectors, High Speed, High resolution X-ray diffraction, Low dark current, Reduced pressure chemical vapor deposition(RPCVD), X-ray diffractometer(XRD)