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Journal Article 36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD
Cited 36 time in scopus Share share facebook twitter linkedin kakaostory
Authors
Dong Woo Suh, Sang Hoon Kim, Ji Ho Joo, Gyung Ock Kim
Issue Date
2009-05
Citation
IEEE Photonics Technology Letters, v.21, no.10, pp.672-674
ISSN
1041-1135
Publisher
IEEE
Language
English
Type
Journal Article
DOI
https://dx.doi.org/10.1109/LPT.2009.2016761
Abstract
We present high-speed Ge p-i-n photodetectors for vertical incidence with high responsivity, grown by reduced pressure chemical vapor deposition. From the high-resolution X-ray diffraction analysis, the Ge epilayer shows good crystalline homogeneity and the residual tensile strain of 0.16%. The fabricated device exhibits the 3-dB bandwidth of 36 GHz, the responsivity of 0.47 A/W, and low dark current of 42 nA at {\\lambda} ~ 1.55 μm. The same device also shows the responsivity of 0.7 A/W at {\\lambda} ~ 1.31 μm. The on-chip measurement of the eye diagram shows a good opening at 40-Gb/s data transmission. © 2009 IEEE.
KSP Keywords
3-dB bandwidth, 6 GHz, Data transmission, Diffraction analysis, Eye diagram, Ge photodetectors, High Speed, High resolution X-ray diffraction, Low dark current, Reduced pressure chemical vapor deposition(RPCVD), X-ray diffractometer(XRD)