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Conference Paper
P‐8: Effects of Active Thickness in Oxide Semiconductor TFTs
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- Authors
- Chi Sun Hwang, Sang Hee Ko Park, Woo Seok Cheong, Jae Heon Shin, Shin Hyuk Yang, Chun Won Byun, Min Ki Ryu, Doo Hee Cho, Sung Min Yoon, Sung Mook Chung, Hye Yong Chu, Kyoung Ik Cho
- Issue Date
- 2009-01
- Citation
- Society for Information Display (SID) International Symposium 2009, pp.1107-1109
- Language
- English
- Type
- Conference Paper
- Abstract
- The effects of active thickness on the characteristics of oxide TFTs were investigated for the case of ZnO TFT and IGZO TFT. As the decrease of active thickness, the Von (Turn-on Voltage of TFT) was shifted to near zero Volt and negative shift of Von as decrease of channel length was also diminished. The overall performance (including subthreshold swing and leakage currents) was improved with thinner active layer. This behavior could be explained under the consideration of unintentional n-type doping in active layer. But, for the constant-current stress, thinner active layer TFT showed less stable behavior.
- KSP Keywords
- Active Layer, Channel Length, Constant current(CC), IGZO TFTs, Leakage current, Negative shift, Overall performance, Oxide TFTs, Oxide semiconductor, Turn-on voltage, current stress