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학술지 Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit
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저자
노윤섭, 장동필, 염인복
발행일
200906
출처
ETRI Journal, v.31 no.3, pp.247-253
ISSN
1225-6463
출판사
한국전자통신연구원 (ETRI)
DOI
https://dx.doi.org/10.4218/etrij.09.0108.0704
초록
We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 μm GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and poweradded efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Kuband high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz. ©2009 ETRI.
키워드
Bias circuit, Compensation, Driver amplifier, Ku-band, PHEMT, MMIC, Power amplifier, Supply voltage, Temperature, Threshold voltage
KSP 제안 키워드
3.5 GHz, Band Power, Driver Amplifier, GaAs pHemt, High power amplifier(HPA), Ku-Band, Microwave monolithic integrated circuits(MMIC), On-chip, Power amplifier MMIC, Saturated output power, Supply voltage