상세정보
학술지
Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit
- 발행일
- 200906
- 출처
- ETRI Journal, v.31 no.3, pp.247-253
- ISSN
- 1225-6463
- 출판사
- 한국전자통신연구원 (ETRI)
- 초록
- We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 μm GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and poweradded efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Kuband high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz. ©2009 ETRI.
- KSP 제안 키워드
- 3.5 GHz, Band Power, Driver Amplifier, GaAs pHemt, High power amplifier(HPA), Ku-Band, Microwave monolithic integrated circuits(MMIC), On-chip, Power amplifier MMIC, Saturated output power, Supply voltage