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Conference Paper
Effect of Channel/Insulator Interface Formation Process on the Oxide TFT Performance
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- Authors
- Sang Hee Ko Park, Chi Sun Hwang, Doo Hee Cho, Sung Min Yoon, Shin Hyuk Yang, Chun Won Byun, Min Ki Ryu, Jeong Ik Lee, Oh Sang Kwon, Woo Seok Cheong, Hye Yong Chu, Kyoung Ik Cho
- Issue Date
- 2009-06
- Citation
- Society for Information Display (SID) International Symposium 2009, pp.276-279
- Language
- English
- Type
- Conference Paper
- Abstract
- Since the first demonstration of oxide TFT driving AM-OLED, oxide TFT technology has attracted explosive interesting and has been developed for the mass production. The performance of oxide TFT has been verified and the remained issue is bias temperature stability. In this paper, we report the effect of interface process including channel and back channel on the oxide TFT performance in a top gate and a bottom gate structure. We also demonstrate transparent AM-OLED driven by highly stable Al doped ZTO TFT.
- KSP Keywords
- AM-OLED, Al-doped, Bottom gate structure, Highly stable, Oxide TFTs, TFT technology, Temperature stability, back channel, formation process, interface formation, mass production