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Conference Paper
21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane
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- Authors
- Doo Hee Cho, Shin Hyuk Yang, Sang Hee Ko Park, Chun Won Byun, Sung Min Yoon, Jeong Ik Lee, Chi Sun Hwang, Hye Yong Chu, Kyoung Ik Cho
- Issue Date
- 2009-06
- Citation
- Society for Information Display (SID) International Symposium 2009, pp.280-283
- Language
- English
- Type
- Conference Paper
- Abstract
- We have fabricated the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing In2O3 content and post-annealing temperature. The AT-ZIO TFT exhibited a field effect mobility of 33 cm2/Vs, a subthreshold swing of 0.08 V/dec, and an on/off current ratio of more than 109 after Al2O3 passivation and post-annealing. We have fabricated AMOLED panels with the bottom gate AT-ZIO TFT back-plane successfully.
- KSP Keywords
- Active Layer, Annealing temperature, Bottom gate, ON/OFF current ratio, Oxide thin films, Post-annealing, Room-temperature, Sn-doped, Thin-Film Transistor(TFT), field-effect mobility, rf Magnetron sputtering