상세정보
학술대회
Al and Sn-Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back-Plane
- 발행일
- 200906
- 출처
- Society for Information Display (SID) International Symposium 2009, pp.280-283
- 협약과제
- 08MB2100, 투명전자 소자를 이용한 스마트 창, 조경익
- 초록
- We have fabricated the transparent bottom gate TFTs using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and AT-ZIO TFT showed a field effect mobility of 15.6 cm2/Vs even before annealing. The mobility increased with increasing In2O3 content and post-annealing temperature. The AT-ZIO TFT exhibited a field effect mobility of 33 cm2/Vs, a subthreshold swing of 0.08 V/dec, and an on/off current ratio of more than 109 after Al2O3 passivation and post-annealing. We have fabricated AMOLED panels with the bottom gate AT-ZIO TFT back-plane successfully.
- KSP 제안 키워드
- Active Layer, Annealing temperature, Bottom gate, ON/OFF current ratio, Oxide thin films, Post-annealing, Room-temperature, Sn-doped, Thin-Film Transistor(TFT), field-effect mobility, rf Magnetron sputtering