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Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer
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- Authors
- Soon Won Jung, Sung Min Yoon, Seung Youl Kang, Kyu Jeong Choi, Woong Chul Shin, Byoung Gon Yu
- Issue Date
- 2009-06
- Citation
- Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328
- ISSN
- 1099-0062
- Publisher
- Electrochemical Society (ECS)
- Language
- English
- Type
- Journal Article
- Abstract
- We have successfully demonstrated low voltage operation of metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)]/ Al2 O 3 /p-Si (100) structures. P(VDF-TrFE) copolymer thin films (thickness of 20 nm) prepared by the spin-coating method and annealed at 140°C showed good ferroelectric behavior with a remnant polarization of 1 μC/ cm2 at a voltage sweep of 짹4 V. Remarkable reduction in leakage current was realized by introducing a 5 nm thick Al2 O 3 layer grown by atomic layer deposition. In capacitance-voltage measurements, MFIS capacitors showed rectangular-shaped hysteresis curves, attributed to the ferroelectric material, in which the memory window width was 1.5 V, even at applied voltages of 짹3 V. © 2009 The Electrochemical Society.
- KSP Keywords
- 20 nm, 5 nm, Atomic Layer Deposition, Capacitance-voltage measurements, Copolymer thin films, Ferroelectric behavior, Ferroelectric capacitors, Hysteresis curves, Leakage current, Low voltage operation, Metal-ferroelectric-insulator-semiconductor