상세정보
학술지
Ku-Band High Power Amplifier MMIC with On-Chip Gate Biasing Circuit
- 발행일
- 200907
- 출처
- Electronics Letters, v.45 no.15, pp.794-795
- ISSN
- 0013-5194
- 출판사
- IET
- 초록
- A new active bias scheme for GaAs HEMT high-power amplifier (HPA) MMICs is proposed that compensates variation of gate threshold voltage and temperature. The quiescent currents of the amplifier were estimated within 짹0.7 when the threshold voltage varied from -0.3 to 0.3V. Also, the measured quiescent currents were increased with temperature, providing compensation of temperature variations. A Ku-band HPA, using 0.5m GaAs pHEMT processes, was fabricated to demonstrate the suggested bias topology. © 2009 The Institution of Engineering and Technology.
- KSP 제안 키워드
- Active bias, Bias scheme, GaAs HEMT, GaAs pHemt, High power amplifier(HPA), Ku-Band, On-chip, Power amplifier MMIC, Temperature variations, biasing circuit, gate threshold voltage