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Ku-Band High Power Amplifier MMIC with On-Chip Gate Biasing Circuit
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- Authors
- Y.S. Noh, D.P. Chang, I.B. Yom
- Issue Date
- 2009-07
- Citation
- Electronics Letters, v.45, no.15, pp.794-795
- ISSN
- 0013-5194
- Publisher
- IET
- Language
- English
- Type
- Journal Article
- Abstract
- A new active bias scheme for GaAs HEMT high-power amplifier (HPA) MMICs is proposed that compensates variation of gate threshold voltage and temperature. The quiescent currents of the amplifier were estimated within 짹0.7 when the threshold voltage varied from -0.3 to 0.3V. Also, the measured quiescent currents were increased with temperature, providing compensation of temperature variations. A Ku-band HPA, using 0.5m GaAs pHEMT processes, was fabricated to demonstrate the suggested bias topology. © 2009 The Institution of Engineering and Technology.
- KSP Keywords
- Active bias, Bias scheme, GaAs HEMT, GaAs pHemt, High power amplifier(HPA), Ku-Band, On-chip, Power amplifier MMIC, Temperature variations, biasing circuit, gate threshold voltage